ESDAVLC5-1BF4 Datasheet, PDF (2/10 Pages) STMicroelectronics – Low clamping, very low capacitance bidirectional single line ESD protection

Characteristics
1
Characteristics
ESDAVLC5-1BF4
Table 1. Absolute maximum ratings
Symbol
Parameter
V_PP ⁽¹⁾ Peak pulse voltage
IEC 61000-4-2 contact discharge
IEC 61000-4-2 air discharge
P_PP(1)
I_PP(1)
Peak pulse power (8/20 µs)
Peak pulse current (8/20 µs)
T_j
Operating junction temperature range
T_stg
Storage temperature range
T_L
Maximum lead temperature for soldering during 10 s
1. For a surge greater than the maximum values, the diode will fail in short-circuit.
Value
Unit
±12
±30
kV
20
W
±1.7
A
-55 to 150
°C
-65 to +150
°C
260
°C
Figure 2. Electrical characteristics (definitions)
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Table 2. Electrical characteristics (values, T_amb = 25 °C)
Test conditions
Test conditions
Value
Unit
Min. Typ. Max.
V_BR
Breakdown voltage
I_R = 1 mA
5.8
8.5 V
V_RM
Working voltage
-5.3
5.3 V
I_RM
Leakage current
V_RM = ±5.3 V
100 nA
C_LINE Line capacitance
V_LINE= 0 V, F = 1 MHz, V_OSC = 30 mV
7 pF
V_CL
Clamping voltage
I_PP = 1.7 A- 8/20
11.7 V
V_CL
Clamping voltage
IEC 61000-4-2, measured at 30 ns
16.3
V
V_CL
Clamping voltage
R_D
Dynamic resistance
TLP measurement (pulse durantion
100 ns), I_PP = 16 A
Pulse durantion 100 ns⁽¹⁾
19.2
V
0.67
Ω
F_C
Cut-off frequency
-3dB
1.5
GHz
1. More information is available in the application note: AN4022, TVS short pulse dynamic resistance measurement and
correlation with TVS clamping voltage during ESD.
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