BUH2M20AP Datasheet, PDF (2/4 Pages) STMicroelectronics – HIGH VOLTAGE NPN SILICON POWER TRANSISTOR

BUH2M20AP
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
6.25
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
IEBO
VCEO
Collector Cut-off
Current (IE = 0)
Emitter Cut-off Current
(IC = 0)
Collector-Emitter
Breakdown Voltage
VCE = 2000 V
VEB = 4 V
IC = 1 mA
VEBO
VCE(sat)∗
Emitter-Base Voltage
(IC = 0)
Collector-Emitter
Saturation Voltage
IE = 10 µA
IC = 2 mA
IB = 400 µA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 2 mA
IB = 400 µA
hFE∗ DC Current Gain
IC = 2 mA
IC = 10 mA
VCE = 10 V
VCE = 10 V
Cob
Output Capacitance
VCB = 100 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
IC = 0 f = 1MHz
Min. Typ.
1200
5
10
10
3
Max.
5
10
5
2
Unit
µA
µA
V
V
V
V
pF
Safe Operating Area
2/4