BUH2M20AP Datasheet, PDF (1/4 Pages) STMicroelectronics – HIGH VOLTAGE NPN SILICON POWER TRANSISTOR

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BUH2M20AP
HIGH VOLTAGE NPN SILICON
POWER TRANSISTOR
s EXTRA HIGH VOLTAGE CAPABILITY
s LOW OUTPUT CAPACITANCE
s CHARACTERIZED FOR LINEAR MODE
OPERATION.
APPLICATIONS:
s DESIGNED SPECIFICALLY FOR DYNAMIC
FOCUS IN CTV AND MONITOR.
DESCRIPTION
The BUH2M20AP is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
Ptot
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 ^oC
Storage Temperature
Max. Operating Junction Temperature
September 1998
Value
2000
1200
5
30
40
20
-65 to 150
150
Unit
V
V
V
mA
mA
W
o_C
o_C
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