BU806 Datasheet, PDF (2/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,150-200V,60W)

BU806 / BU807
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
2.08
70
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
for BU807
for BU806
VCE = 330 V
VCE = 400 V
ICEV Collector Cut-off
Current (VBE = -6V)
for BU807
for BU806
VCE = 330 V
VCE = 400 V
IEBO
Emitter Cut-off
Current (IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VEB = 6 V
IC = 100 mA
IC = 5A
for BU807
for BU806
IB = 50mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 5A
IB = 50mA
VF∗ Damper Diode
Forward Voltage
IF = 4A
RESISTIVE LOAD
ton
Turn-on Time
toff
Turn-off Time
IC = 5 A
IB1 = 50 mA
ts
Storage Time
tf
Fall Time
∗ Pulsed: Pulse duration = 300 µs, duty cycle < 1.5 %
VCC = 100 V
IB2 = -500 mA
Min. Typ.
150
200
0.35
0.4
0.55
0.2
Max.
100
100
100
100
3.5
1.5
2.4
2
1
Unit
µA
µA
µA
µA
mA
V
V
V
V
V
µs
µs
µs
µs
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