BU806 Datasheet, PDF (1/4 Pages) Mospec Semiconductor – POWER TRANSISTORS(8.0A,150-200V,60W)

BU806
®
BU807
MEDIUM VOLTAGE NPN FAST SWITCHING
DARLINGTON TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s NPN DARLINGTONS
s LOW BASE-DRIVE REQUIREMENTS
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
s HORIZONTAL DEFLECTION FOR
MONOCHROME TVs
DESCRIPTION
The devices are silicon Epitaxial Planar NPN
power transistors in Darlington configuration with
integrated base-emitter speed-up diode, mounted
in TO-220 plastic package.
They can be used in horizontal output stages of
110 ^oCRT video displays.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO
VCEV
VCEO
VEBO
IC
ICM
IDM
IB
Ptot
Tstg
Tj
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (VBE = -6V)
Collector-emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current
Damper Diode Peak Forward Current
Base Current
Total Power Dissipation at Tcase < 25 ^oC
Storage Temperature
Max Operating Junction Temperature
October 2003
Value
BU806
BU807
400
330
400
330
200
150
6
8
15
10
2
60
-65 to 150
150
Unit
V
V
V
V
A
A
A
A
W
o_C
o_C
1/4