BU508DFI Datasheet, PDF (2/6 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

BU508DFI
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
2.5
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICES Collector Cut-off
Current (VBE = 0)
VCE = 1500 V
VCE = 1500 V
Tj = 125 ^oC
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VEB = 5 V
IC = 100 m A
IC = 4.5 A
IB = 2 A
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 4.5 A
IB = 2 A
INDUCTIVE LOAD
ts
Storage Time
tf
Fall Time
IC = 4.5 A hFE = 2.5 VCC = 140 V
LC = 0.9 mH LB = 3 µH
(see figure 1)
VF
Diode Forward Voltage IF = 4 A
fT
Transition Frequency IC = 0.1 A
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCE = 5 V f = 5 MHz
Min.
700
Typ.
7
550
7
Max.
1
2
300
1
1.3
2
Unit
mA
mA
mA
V
V
V
µs
ns
V
MHz
Safe Operating Area
Thermal Impedance
2/6