BU508DFI Datasheet, PDF (1/6 Pages) STMicroelectronics – HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

®
BU508DFI
HIGH VOLTAGE FAST-SWITCHING
NPN POWER TRANSISTOR
s STMicroelectronics PREFERRED
SALESTYPE
s HIGH VOLTAGE CAPABILITY ( > 1500 V )
s NPN TRANSISTOR WITH INTEGRATED
FREEWHEELING DIODE
s FULLY INSULATED PACKAGE (U.L.
COMPLIANT) FOR EASY MOUNTING
APPLICATIONS:
s HORIZONTAL DEFLECTION FOR COLOUR
TV UP TO 25"
DESCRIPTION
The BU508DFI is manufactured using
Multiepitaxial Mesa technology for cost-effective
high performance and uses a Hollow Emitter
structure to enhance switching speeds.
3
2
1
ISOWATT218
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCES
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
Visol
Tstg
Tj
Parameter
Collector-Emitter Voltage (VBE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Base Peak Current (tp < 5 ms)
Total Dissipation at Tc = 25 ^oC
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
April 2002
Value
1500
700
10
8
15
5
8
50
2500
-65 to 150
150
Unit
V
V
V
A
A
A
A
W
V
o_C
o_C
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