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| BDX53B Datasheet, PDF (2/6 Pages) Motorola, Inc – Plastic Medium-Power Complementary Silicon Transistors | |||
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BDX53B - BDX53C - BDX54B - BDX54C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
2.08
70
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
Pa ram et e r
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
ICEO
Collector Cut-off
Current (IB = 0)
IEBO Emitter Cut-off Current
(IC = 0)
VCEO(s us)â Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)â Collector-emit ter
Saturation Voltage
for BDX53B/54B
for BDX53C/54C
for BDX53B/54B
for BDX53C/54C
VEB = 5 V
VCB = 80 V
VCB = 100V
VCE = 40 V
VCE = 50V
IC = 100 mA
for BDX53B/54B
for BDX53C/54C
IC = 3 A
IB =12 mA
VBE(sat)â Base-emitter
Saturation Voltage
IC = 3 A
hFEâ DC Current Gain
IC = 3 A
VFâ Parallel-diode Forward IF = 3 A
Voltage
IF = 8 A
â Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
IB =12 mA
VCE = 3 V
Min. Typ.
80
100
750
1.8
2.5
Max.
0.2
0.2
0.5
0.5
2
2
2.5
2.5
Unit
mA
mA
mA
mA
mA
V
V
V
V
V
V
Safe Operating Area
Derating Curve
2/6
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