BDX53B Datasheet, PDF (1/6 Pages) Motorola, Inc – Plastic Medium-Power Complementary Silicon Transistors

BDX53B / BDX53C
®
BDX54B / BDX54C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
APPLICATIONS
s AUDIO AMPLIFIERS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDX53B and BDX53C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in hammer drivers, audio amplifiers and
other medium power linear and switching
applications.
The complementary PNP types are BDX54B and
BDX54C respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
Parameter
V_CBO Collector-Base Voltage (I_E = 0)
V_CEO Collector-Emitter Voltage (I_B = 0)
V_EBO Emitter-base Voltage (I_C = 0)
I_C
Collector Current
I_CM Collector Peak Current (repetitive)
I_B
Base Current
P_tot Total Dissipation at T_c ≤ 25 ^oC
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
NPN
PNP
September 1999
R1 Typ. = 10 KΩ
R2 Typ. = 150 Ω
Value
BDX53B
BDX53C
BDX54B
BDX54C
80
100
80
100
5
8
12
0.2
60
-65 to 150
150
Un it
V
V
V
A
A
A
W
o_C
o_C
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