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| BDX33B Datasheet, PDF (2/4 Pages) Motorola, Inc – Darlington Complementary Silicon Power Transistors | |||
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BDX33B BDX33C BDX34B BDX34C
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
1.78
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbo l
Parameter
Test Conditions
ICBO
Collector Cut-off Current
(IE = 0)
for BDX33B/34B
for BDX33C/34C
Tcase = 100 oC
for BDX33B/34B
for BDX33C/34C
VCB = 80 V
VCB = 100V
VCB = 80 V
VCB = 100 V
ICEO
Collector Cut-off Current
(IB = 0)
for BDX33B/34B
for BDX33C/34C
Tcase = 100 oC
for BDX33B/34B
for BDX33C/34C
VCE = 40 V
VCE = 50V
VCE = 40 V
VCE = 50 V
IEBO Emitter Cut-of f Current
(IC = 0)
VCEO(s us)â Collector-Emitt er Sust aining
Voltage (IB = 0)
VEB = 5 V
IC =100 mA for BDX33B/34B
for BDX33C/34C
VCER(sus)â Collector-emitt er Sustaining
Voltage (RBE =100 â¦)
VCEV(su s)â Collector-emitt er Sustaining
Voltage (VBE =-1.5 V)
IC = 100 mA for BDX33B/34B
for BDX33C/34C
IC = 100 mA for BDX33B/34B
for BDX33C/34C
VCE(sat)â Collector-emitt er Saturat ion
V ol ta ge
IC = 3 A
IB = 6 mA
V BE â
hFEâ
Base-emitter Voltage
DC Current Gain
IC = 3 A
IC = 3 A
V CE = 3 V
V CE = 3 V
VFâ Parallel-Diode Forward
V ol ta ge
IF = 8 A
hfe
Small Signal Current Gain
IC = 1 A
â Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 5 V
f = 1MHz
Mi n.
80
1 00
80
1 00
80
1 00
7 50
1 00
Typ .
M ax.
0.2
0.2
5
5
0.5
0.5
10
10
5
2.5
2.5
4
Unit
mA
mA
mA
mA
mA
mA
mA
mA
mA
V
V
V
V
V
V
V
V
V
V
Safe Operating Area
2/4
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