BDX33B Datasheet, PDF (1/4 Pages) Motorola, Inc – Darlington Complementary Silicon Power Transistors

BDX33B BDX33C
®
BDX34B BDX34C
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
DESCRIPTION
The BDX33B and BDX33C are silicon
Epitaxial-Base NPN power transistors in
monolithic Darlington configuration mounted in
Jedec TO-220 plastic package. They are intented
for use in power linear and switching applications.
The complementary PNP types are BDX34B and
BDX34C respectively.
3
2
1
TO-220
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 KΩ
R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P ar ame te r
V_CBO Collector-Base Voltage (I_E = 0)
V_CEO Collector-Emitter Voltage (I_B = 0)
I_C
Collector Current
I_CM Collector Peak Current
I_B
Base Current
P_tot T otal Dissipat ion at T_c ≤ 25 ^oC
T_stg Storage Temperature
Tj Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
October 1999
NPN
PNP
BDX33B
BDX33C
BDX34B
BDX34C
80
100
80
100
10
15
0.25
70
-65 to 150
150
Un it
V
V
A
A
A
W
o_C
o_C
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