BDW93CFP_01 Datasheet, PDF (2/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

BDW93CFP / BDW94CFP
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
3.8
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 100 V
VCB = 100 V
Tcase = 150 ^oC
ICEO
Collector Cut-off
Current (IB = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VCE = 80 V
VEB = 5 V
IC = 100 mA
IC = 5 A
IC = 10 A
IB = 20 mA
IB = 100 mA
VBE(sat)∗ Base-Emitter
Saturation Voltage
IC = 5 A
IC = 10 A
IB = 20 mA
IB = 100 mA
hFE∗ DC Current Gain
IC = 3 A
IC = 5 A
IC = 10 A
VCE = 3 V
VCE = 3 V
VCE = 3 V
VF* Parallel-diode Forward IF = 5 A
Voltage
IF = 10 A
hfe
Small Signal Current IC = 1 A
Gain
f = 1 MHz
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
For PNP types voltage and current values are negative.
VCE = 10 V
Min.
100
1000
750
100
20
Typ.
Max.
100
5
1
Unit
µA
mA
mA
2
mA
V
2
V
3
V
2.5
V
4
V
20000
1.3
2
V
1.8
4
V
Safe Operating Area
2/4