BDW93CFP_01 Datasheet, PDF (1/4 Pages) STMicroelectronics – COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

BDW93CFP
®
BDW94CFP
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
s STMicroelectronics PREFERRED
SALESTYPES
s MONOLITHIC DARLINGTON
CONFIGURATION
s COMPLEMENTARY PNP - NPN DEVICES
s INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
s FULLY MOLDED INSULATED PACKAGE
s 2000 V DC INSULATION (U.L. COMPLIANT)
APPLICATIONS
s LINEAR AND SWITCHING INDUSTRIAL
EQUIPMENT
DESCRIPTION
The BDW93CFP is a silicon Epitaxial-Base NPN
transistor in monolithic Darlington configuration
mounted in TO-220FP fully molded insulated
package. It is intented for use in power linear
and switching applications.
The complementary PNP type is the BDW94CFP.
3
2
1
T0-220FP
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 10 KΩ
R2 Typ. = 150 Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO Collector-Base Voltage (IE = 0)
VCEO Collector-Emitter Voltage (IB = 0)
IC
Collector Current
ICM Collector Peak Current
IB
Base Current
Ptot Total Dissipation at T_c ≤ 25 ^oC
Tstg Storage Temperature
Tj
Max. Operating Junction Temperature
For PNP types voltage and current values are negative.
September 2001
NPN
PNP
Value
BDW93CFP
BDW94CFP
100
100
12
15
0.2
33
-65 to 150
150
Unit
V
V
A
A
A
W
o_C
o_C
1/4