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| AM1214-200 Datasheet, PDF (2/4 Pages) STMicroelectronics – L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS | |||
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AM1214-200
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
S ymb o l
Test Conditions
BVCBO
BVEBO
BVCES
ICES
hFE
IC = 50mA
IE = 30mA
IC = 50mA
VBE = 0V
VCE = 5V
IE = 0mA
IC = 0mA
VBE = 0V
VCE = 40V
IC = 500mA
DYNAMIC
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Test Conditions
POUT
ηc
f = 1215 â 1400MHz
f = 1215 â 1400MHz
GP
f = 1215 â 1400MHz
N ot e:
Pulse Width = 150µSec
Duty Cycle = 5%
PIN = 40W
PIN = 40W
PIN = 40W
VCC = 40V
VCC = 40V
VCC = 40V
Va l u e
Unit
Min. Typ. Max.
70 â â V
3.0 â â V
70 â â V
â â 30 mA
10 â â â
Value
Min. Typ. Max.
200 â â
45 â â
7.0 â â
Unit
W
%
dB
TYPICAL PERFORMANCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs FREQUENCY
2/4
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