AM1214-200 Datasheet, PDF (1/4 Pages) STMicroelectronics – L-BAND RADAR APPLICATIONS RF & MICROWAVE TRANSISTORS

AM1214-200
RF & MICROWAVE TRANSISTORS
L-BAND RADAR APPLICATIONS
....... REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
P_OUT = 200 W MIN. WITH 7.0 dB GAIN
PRELIMINARY DATA
.400 x .500 2LFL (M205)
hermetically sealed
ORDER CODE
BRANDING
AM1214-200
1214-200
DESCRIPTION
The AM1214-200 device is a high power Class
C transistor specifically designed for L-Band Radar
pulsed output and driver applications.
This device is capable of operation over a wide
range of pulse widths, duty cycles and tempera-
tures, and wiil tolerate severe mismatch and over-
drive conditions. Low RF thermal resistance and
computerized automatic wire bonding techniques
ensure high reliability and product consistency.
AM1214-200 is supplied in the BIGPAC™ hermetic
metal/ceramic package with internal input/output
matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symb ol
PDISS
I_C
V_CC
TJ
TSTG
Parameter
Power Dissipation* (TC ≤ 100°C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
Value
Unit
575
W
16
A
40
V
250
°_C
− 65 to +200
°_C
0.26
°_C/W
September 1992
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