AM1011-500 Datasheet, PDF (2/4 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

ELECTRICAL SPECIFICATIONS (T_case = 25^°C)
STATIC
Symbol
BV_CBO
BVEBO
BVCES
ICES
hFE
I_C = 50 mA
I_E = 30 mA
IC = 50 mA
VBE = 0 V
VCE = 5 V
T est Con ditio ns
I_E = 0 mA
I_C = 0 mA
VBE = 0 V
VCE = 50 V
IC = 1.0 A
DYNAMIC
Symbol
Test Conditions
POUT f = 1090 MHz
PIN = 70 W
VCC = 50 V
hc f = 1090 MHz
POUT = 500 W VCC = 50 V
GP f = 1090 MHz
POUT = 500 W VCC = 50 V
Load P_OUT = 500 W Peak
Mismatch _{F = 1090MHz}
VCC = 50 V
VSWR = 10:1, 10µS, 1% Duty
VSWR = 5:1, 32µS, 2% Duty
Note: Pulse Width = 32µSec, Duty Cycle = 2%
AM1011-500
Value
Un it
Min. Typ . Max.
70 — — V
3.0 — — V
70 — — V
— — 40 mA
10 — 200 —
Va l u e
Unit
Min. Typ. Max.
500 — — W
40 — — %
8.5 — — dB
No Degradation in Output
Power
TYPICAL PERFORMANCE
POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
P_OUT
POWER OUTPUT & COLLECTOR
EFFICIENCY vs POWER INPUT
POUT
η_C
η_C
* Pulse Burst conditions:
128 µSec train, 0.5 µSec on,
0.5 µSec off; with a period of 6.4 msec.