AM1011-500 Datasheet, PDF (1/4 Pages) STMicroelectronics – RF & MICROWAVE TRANSISTORS AVIONICS APPLICATIONS

AM1011-500
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
. POUT = 500 W MIN. WITH 8.5 dB MIN.
GAIN
. 10:1 LOAD VSWR CAPABILITY @ 10µS.,
1% DUTY
. SIXPAC™ HERMETIC METAL/CERAMIC
PACKAGE
. EMITTER SITE BALLASTED OVERLAY
GEOMETRY
. REFRACTORY/GOLD METALLIZATION
. LOW THERMAL RESISTANCE
. INTERNAL INPUT/OUTPUT MATCHING
. CHARACTERIZED UNDER 32µS.,2%
DUTY CYCLE PULSE CONDITIONS
.400 x .600 2LFL (M198)
hermetically sealed
ORDER CODE
AM1011-500
BRANDING
1011-500
DE S CRI P T IO N
The AM1011-500 device is a high power Class C
transistor specifically designed for L-Band Av-
ionic applications involving high pulse burst duty
cycles.
This device is capable of operation over a wide
range of pulse widths, duty cycles, and tempera-
tures. Low RF thermal resistance and computer-
ized automatic wire bonding techniques ensure
high reliability and product consistency.
The AM1011-500 is supplied in the SIXPAC™
Hermetic metal/ceramic package with internal in-
put/output matching structures.
PIN CONNECTION
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (Tcase = 25^°C)
Symbol
Parameter
P_DISS
I_C
V_CC
TJ
Power Dissipation*
Device Current*
(TC ≤ 100°C)
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
T _{ST G}
Storage Temperature
Value
Unit
1,3 60
W
27
A
55
V
250
°_C
− 65 to +200
°_C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
*Applies only to rated RF amplifier operation
0.11
°_C/W