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| AM0912-080 Datasheet, PDF (2/3 Pages) STMicroelectronics – AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS | |||
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AM0912-080
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC
Symbol
Test Conditions
BVCBO
BVEBO
BVCER
ICBO
hFE
IC = 40mA
IE = 10mA
IC = 40mA
VCB = 50V
VCE = 5V
IE = 0mA
IC = 0mA
RBE = 10â¦
IC = 2A
DYNAMIC
Symbol
Test Conditions
POUT
ηc
f = 960 â 1215MHz
f = 960 â 1215MHz
GP
f = 960 â 1215MHz
Note:
Pulse Width = 10µSec
Duty Cycle = 10%
PIN = 13W
PIN = 13W
PIN = 13W
VCC = 50V
VCC = 50V
VCC = 50V
Value
Unit
Min. Typ. Max.
65 â â V
3.0 â â V
65 â â V
â â 12 mA
20 â 120 â
Value
Min. Typ. Max.
90 100 â
38 44 â
8.4 â â
Unit
W
%
dB
TEST CIRCUIT
Ref. Dwg. No. J-313120
.120
All dimensions are in inches.
Substrate material: .025 thick AI2O3
C1,C2 : 0.3 - 3.5 pF Johanson Capacitors, or Equiv.
C3 : 100 pF Chip Capacitor
C4,C6 : 1500 pF RF Feedthru
2/3
C5 : 100 MF, Electrolytic 50V
L1,L2 : No. 32 Wire, 4 Turn .062 I.D.
RBE : 0 - 1.0 Ohm
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