AM0912-080 Datasheet, PDF (1/3 Pages) STMicroelectronics – AVIONICS APPLICATIONS RF & MICROWAVE TRANSISTORS

AM0912-080
RF & MICROWAVE TRANSISTORS
AVIONICS APPLICATIONS
........ REFRACTORY/GOLD METALLIZATION
EMITTER SITE BALLASTED
LOW THERMAL RESISTANCE
INPUT/OUTPUT MATCHING
OVERLAY GEOMETRY
METAL/CERAMIC HERMETIC PACKAGE
POUT = 90 W MIN. WITH 13 dB GAIN
BANDWIDTH 225 MHz
.400 x .400 2NLFL (S042)
hermetically sealed
ORDER CODE
AM0912-080
BRANDING
0912-80
DESCRIPTION
PIN CONNECTION
The AM0912-080 Avionics power transistor is a
broadband, high peak pulse power device speci-
fically designed for avionics applications requiring
broad bandwidth with moderate duty cycle and
pulse width constraints such as ground/ship based
DME/TACAN.
This device is also designed for specialized ap-
plications including JTIDS where reduced power
provided under pulse formats utilizing short pulse
widths and high burst or overall duty cycles.
The AM0912-080 is housed in the unique
AMPAC™ Hermetic Metal/Ceramic package with
internal Input/Output matching structures.
1. Collector
2. Base
3. Emitter
4. Base
ABSOLUTE MAXIMUM RATINGS (T_case = 25^°C)
Symbol
Parameter
Value
Unit
PDISS
IC
VCC
TJ
TSTG
Power Dissipation* (TC ≤100˚C)
Device Current*
Collector-Supply Voltage*
Junction Temperature (Pulsed RF Operation)
Storage Temperature
220
W
7.0
A
50
V
250
°_C
− 65 to +200
°_C
THERMAL DATA
RTH(j-c) Junction-Case Thermal Resistance*
0.80
°_C/W
*Applies only to rated RF amplifier operation
September 1992
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