2SD2012_03 Datasheet, PDF (2/5 Pages) STMicroelectronics – NPN SILICON POWER TRANSISTOR

2SD2012
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
5
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
IEBO
Emitter Cut-off Current
(IC = 0)
V(BR)CEO∗ Collector-Emitter
Breakdown Voltage
(IB = 0)
VCE(sat)∗ Collector-Emitter
Saturation Voltage
VCB = 60 V
VEB = 7 V
IC = 50 mA
IC = 2 A
IB = 0.2 A
VBE∗ Base-Emitter Voltage IC = 0.5 A
VCE = 5 V
hFE∗ DC Current Gain
IC = 0.5 A
IC = 2 A
VCE = 5 V
VCE = 5 V
fT
Transition frequency VCE = 5 V
IC = 0.5 A
CCBO Collector-Base
VCB = 10 V IE = 0
Capacitance
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
f = 1 MHz
Min.
60
100
20
Typ.
0.4
0.75
3
35
Max.
100
100
1
1
320
Unit
µA
µA
V
V
V
MHz
pF
Safe Operating Area
Derating Curve
2/5