2SD2012_03 Datasheet, PDF (1/5 Pages) STMicroelectronics – NPN SILICON POWER TRANSISTOR

®
2SD2012
NPN SILICON POWER TRANSISTOR
s HIGH DC CURRENT GAIN
s LOW SATURATION VOLTAGE
s INSULATED PACKAGE FOR EASY
MOUNTING
APPLICATIONS
s GENERAL PURPOSE POWER AMPLIFIERS
s GENERAL PURPOSE SWITCHING
DESCRIPTION
The 2SD2012 is a silicon NPN power transistor
housed in TO-220F insulated package.
It is inteded for power linear and switching
applications.
3
2
1
TO-220F
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCEO
VEBO
IC
ICM
IB
Ptot
Visol
Tstg
Tj
Parameter
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Collector Peak Current (tp < 5 ms)
Base Current
Total Dissipation at Tc ≤ 25 ^oC
Insulation Withstand Voltage (RMS) from All
Three Leads to Exernal Heatsink
Storage Temperature
Max. Operating Junction Temperature
October 2003
Value
60
60
7
3
6
0.5
25
1500
-65 to 150
150
Unit
V
V
V
A
A
A
W
V
o_C
o_C
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