2N5415S Datasheet, PDF (2/4 Pages) STMicroelectronics – HIGH-VOLTAGE AMPLIFIER

2N5415S
THERMAL DATA
R_{th j-cas e} Thermal Resistance Junction-case
R _{th j-amb} Thermal Resistance Junction-ambient
Max
17.5
Max
175
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (T _amb = 25 °C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
I_CBO
I_CEO
I_EBO
V( _{BR) CEO} *
V_{CE( sat )}*
V_{B E} *
h_FE*
f_T
Collector Cutoff Current
(I_E = 0)
Collector Cutoff Current
(I_B = 0)
Emitter Cutoff Current
(I_C = 0)
Collector-emitter
Breakdown Voltage
(I_B = 0)
Collector-emitter
Saturation Voltage
Base-Emitter Voltage
DC Current Gain
Transition Frequency
V_CB = – 175 V
V_CE = – 150 V
V_EB = – 4 V
I_C = – 2 mA
– 200
I _C = – 50 mA I_B = – 5 mA
I_C = – 50 mA V_CE = – 10 V
I_C = – 50 A
V_CE = – 10 V
30
I _C = – 10 mA V_CE = – 10 V
f = 5 MHz
15
C _CBO
Collector-base
Capacitance
I_E = 0
f = 1 MHz
V_CB = – 10 V
* Pulsed : pulse duration = 300 µs, duty cycle = 1 %.
Typ.
Max.
– 50
– 50
– 20
– 2.5
– 1.5
150
15
Unit
µA
µA
µA
V
V
V
MHz
pF
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