2N5415S Datasheet, PDF (1/4 Pages) STMicroelectronics – HIGH-VOLTAGE AMPLIFIER

2N5415S
DESCRIPTION
The 2N5415S is a silicon planar epitaxial PNP tran-
sistor in Jedec TO-39 metal case, intended for high
vol-tage switching and linear amplifier applications.
HIGH-VOLTAGE AMPLIFIER
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
V_CBO
V_CEO
V_EBO
I_CM
P_{to t}
T _{st g}, T_j
Parameter
Collector-base Voltage (I_E = 0)
Collector-emitter Voltage (I_B = 0)
Emitter-base Voltage (I_C = 0)
Collector Peak Current
Total Power Dissipation at T_amb ≤ 25 °C
at T _{cas e} ≤ 25 °C
Storage and Junction Temperature
October 1988
Value
– 200
– 200
–4
–1
1
10
– 55 to 200
Unit
V
V
V
A
W
W
°C
1/4