2N5415 Datasheet, PDF (2/4 Pages) NXP Semiconductors – PNP high-voltage transistors

2N5415 / 2N5416
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Rthj-amb Thermal Resistance Junction-ambient
Max
Max
17.5
175
o_C/W
o_C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 ^oC unless otherwise specified)
Symbol
Parameter
Test Conditions
ICBO
Collector Cut-off
Current (IE = 0)
for 2N5415 VCB = -175 V
for 2N5416 VCB = -280 V
ICEO
IEBO
Collector Cut-off
Current (IB = 0)
Emitter Cut-off Current
(IC = 0)
VCE = -150 V
for 2N5415 VEB = -4 V
for 2N5416 VEB = -6 V
VCER∗ Collector-Emitter
Sustaining Voltage
IC = -50 mA RBE = 50Ω for 2N5416
VCEO(sus)∗ Collector-Emitter
Sustaining Voltage
IC = -10 mA
for 2N5415
for 2N5416
VCE(sat)∗ Collector-Emitter
Saturation Voltage
IC = -50 mA IB = -5 mA
VBE∗
hFE∗
Base-Emitter Voltage
DC Current Gain
IC = -50 mA
IC = -50 mA
for 2N5415
for 2N5416
VCE = -10 V
VCE = -10 V
hfe
Small Signal Current IC = -5 mA VCE = -10 V f = 1KHz
Gain
fT
Transition frequency IC = -10 mA VCE = -10 V f = 5MHz
CCBO
Collector Base
Capacitance
IE = 0
∗ Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
VCB = -10 V
f = 1MHz
Min.
-350
-200
-300
30
30
25
15
Typ.
Max.
-50
-50
-50
-20
-20
-2.5
-1.5
150
120
25
Unit
µA
µA
µA
µA
µA
V
V
V
V
V
MHz
pF
2/4