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2N5415 Datasheet, PDF (1/4 Pages) NXP Semiconductors – PNP high-voltage transistors
2N5415
2N5416
SILICON PNP TRANSISTORS
s SGS-THOMSON PREFERRED SALESTYPES
s PNP TRANSISTOR
DESCRIPTION
The 2N5415, 2N5416 are high voltage silicon
epitaxial planar PNP transistors in Jedec TO-39
metal case designed for use in consumer and
industrial line-operated applications.
These devices are particularly suited as drivers in
high-voltage low current inverters, switching and
series regulators.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
VCBO
VCEO
VEBO
IC
IB
Ptot
Ptot
Tstg
Tj
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
Base Current
Total Dissipation at Tc ≤ 25 oC
Total Dissipation at Tamb ≤ 50 oC
Storage Temperature
Max. Operating Junction Temperature
June 1997
Value
2N5415
2N5416
-200
-350
-200
-300
-4
-6
-1
-0.5
10
1
-65 to 200
200
Unit
V
V
V
A
A
W
W
oC
oC
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