M29DW324DT Datasheet, PDF (19/49 Pages) STMicroelectronics – 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory

M29DW324DT, M29DW324DB
Table 6. Commands, 8-bit mode, BYTE = V_IL
Bus Write Operations
Command
1st
2nd
3rd
4th
5th
6th
Add Data Add Data Add Data Add Data Add Data Add Data
Read/Reset
1 X F0
3 AAA AA 555 55
X
F0
Auto Select
3 AAA AA
555
55
(BKA)
AAA
90
Program
4 AAA AA 555 55 AAA A0 PA PD
Quadruple Byte Program 5 AAA 55 PA0 PD0 PA1 PD1 PA2 PD2 PA3 PD3
Unlock Bypass
3 AAA AA 555 55 AAA 20
Unlock Bypass Program 2 X A0 PA PD
Unlock Bypass Reset
2 X 90 X 00
Chip Erase
6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10
Block Erase
6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30
Erase Suspend
1 BKA B0
Erase Resume
1 BKA 30
Read CFI Query
1 AA 98
Enter Extended Block
3 AAA AA 555 55 AAA 88
Exit Extended Block
4 AAA AA 555 55 AAA 90 X 00
Note: X Don’t Care, PA Program Address, PD Program Data, BA Any address in the Block. All values in the table are in hexadecimal.
The Command Interface only uses A–1, A0-A10 and DQ0-DQ7 to verify the commands; A11-A20, DQ8-DQ14 and DQ15 are Don’t
Care. DQ15A–1 is A–1 when BYTE is V_IL or DQ15 when BYTE is V_IH.
Table 7. Program, Erase Times and Program, Erase Endurance Cycles
Parameter
Min
Typ ^{(1, 2)}
Max⁽²⁾
Unit
Chip Erase
40
200⁽³⁾
s
Block Erase (64 KBytes)
0.8
6⁽³⁾
s
Erase Suspend Latency time
50⁽⁴⁾
µs
Program (Byte or Word)
10
200⁽⁴⁾
µs
Double Word Program (Byte or Word)
10
200⁽³⁾
µs
Chip Program (Byte by Byte)
40
200⁽³⁾
s
Chip Program (Word by Word)
20
100⁽³⁾
s
Chip Program (Quadruple Byte or Double Word)
10
100
s
Program/Erase Cycles (per Block)
100,000
cycles
Data Retention
20
years
Note: 1. Typical values measured at room temperature and nominal voltages.
2. Sampled, but not 100% tested.
3. Maximum value measured at worst case conditions for both temperature and V_CC after 100,00 program/erase cycles.
4. Maximum value measured at worst case conditions for both temperature and VCC.
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