M29DW324DT Datasheet, PDF (1/49 Pages) STMicroelectronics – 32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block 3V Supply Flash Memory

M29DW324DT
M29DW324DB
32 Mbit (4Mb x8 or 2Mb x16, Dual Bank 16:16, Boot Block)
3V Supply Flash Memory
FEATURES SUMMARY
s SUPPLY VOLTAGE
– V_CC = 2.7V to 3.6V for Program, Erase and
Read
– V_PP =12V for Fast Program (optional)
s ACCESS TIME: 70, 90ns
s PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
s MEMORY BLOCKS
– Dual Bank Memory Array: 16Mbit+16Mbit
– Parameter Blocks (Top or Bottom Location)
s DUAL OPERATIONS
– Read in one bank while Program or Erase in
other
s ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
s V_PP/WP PIN for FAST PROGRAM and WRITE
PROTECT
s TEMPORARY BLOCK UNPROTECTION
MODE
s COMMON FLASH INTERFACE
– 64 bit Security Code
s EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
s LOW POWER CONSUMPTION
– Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code M29DW324DT: 225Ch
– Bottom Device Code M29DW324DB: 225Dh
Figure 1. Packages
TSOP48 (N)
12 x 20mm
FBGA
TFBGA63 (ZA)
7 x 11mm
FBGA
TFBGA48 (ZE)
6 x 8mm
June 2003
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