STW82100B Datasheet, PDF (15/67 Pages) STMicroelectronics – RF down converter with embedded integer-N synthesizer

STW82100B
6
Electrical characteristics
Electrical characteristics
Note:
Vsupply digital = 3.3 V, Vsupply analog1 = 3.3 V, Vsupply analog2 = 5 V, F_RF = 2100 MHz,
F_LO = 1950 MHz, T_A = +25 *C, RF power = 0 dBm, unless otherwise specified.
Table 6.
)
Down
converter
mixer
and
IF
amplifier
electrical
characteristics⁽¹⁾
Symbol
Parameter
F_RF
RF Frequency
F_LO
LO Frequency
F_IF
IF Center Frequency⁽²⁾
CG
Power Conversion Gain
Conditions
-
VCOA divided by 2
VCOB divided by 2
F_IF = ABS(F_LO-F_RF)
Rin = 50 ohm, Rout = 200 ohm
RFin = 0 dBm
Min Typ Max Unit
1620 - 2400 MHz
1650 - 1950 MHz
2050 - 2370 MHz
70 - 400 MHz
7.5 8 8.5 dB
CG_ΔT
Power Conversion Gain over
Temperature⁽³⁾
T= -40 to +85 °C
- ±0.7 - dB
IP_1dB
Input P1dB
High current Mode
Low current Mode
- 13.5 -
dBm
-
8
-
IIP3
Third-order input intercept
point⁽⁴⁾
High current Mode
Low current Mode
24.5 25.5
18.5 19.5
-
dBm
-
IIP3_ΔT
IIP3 variation over
temperature⁽³⁾
T= -40 to +85 °C
- ±0.5 - dB
nF_RF-nF_LO Spurious rejection at IF⁽³⁾
NF_SSB
Noise figure
2F_RF-2F_LO F_RFin = -5 dBm,
F_IF = 150 MHz
3F_RF-3F_LO F_RFin = -5 dBm,
F_IF = 150 MHz
High-current mode, MIX = 0011
Low-current mode, MIX = 0011
-
77
- dBc
-
77
- dBc
- 10.5 11 dB
- 10.5 11 dB
-
LO to IF Leakage
1xLO
2xLO
- -35 - dBm
-33
-
LO to RF Leakage
-
- -29 - dBm
-
RF to IF Isolation
-
-
58
- dB
RF_RL
IF_RL
RF Return Loss
IF Return Loss
Gain Flatness for TX
-
observation path⁽⁵⁾
Matched to 50 ohm
-
20
- dB
Matched to 200 ohm
-
25
- dB
Maximum deviation from F_c over ±10
MHz. For any F_c within each TX
-0.05 - +0.05 dB
observation path band.
Maximum deviation from F_c over ±30
MHz. For any F_c within each TX
-0.10 - +0.10 dB
observation path band.
Doc ID 018355 Rev 5
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