M76DW52003TA Datasheet, PDF (15/27 Pages) STMicroelectronics – 32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product

M76DW52003TA, M76DW52003BA
Table 7. SRAM DC Characteristics
Symbol
Parameter
Test Condition
I_LI Input Leakage Current
0V ≤ V_IN ≤ V_CCS
I_LO Output Leakage Current
0V ≤ V_OUT ≤ V_CCS,
SRAM Outputs Hi-Z
I_CCS V_CC Standby Current
E1_S ≥ V_CCS – 0.2V
V_IN ≥ V_CCS – 0.2V or V_IN ≤ 0.2V
f = fmax (A0-A17 and DQ0-DQ15
only)
f = 0 (G_S, W_S, UB_S and LB_S)
E1_S ≥ V_CCS – 0.2V
V_IN ≥ V_CCS – 0.2V or V_IN ≤ 0.2V, f = 0
I_CC Supply Current
f = fmax = 1/_AVAV,
V_CCS = 3.3V, I_OUT = 0 mA
f = 1MHz,
V_CCS = 3.3V, I_OUT = 0 mA
V_IL Input Low Voltage
V_IH Input High Voltage
V_OL Output Low Voltage
V_OH Output High Voltage
Note: 1. Sampled only, not 100% tested.
V_CCS = V_CC min
I_OL = 2.1mA
V_CCS = V_CC min
I_OH = –1.0mA
Min
–0.3
2.2
2.4
Typ
Max Unit
±1
µA
±1
µA
7
15
µA
7
15
µA
5.5
12
mA
1.5
3
mA
0.8
V
V_CCS
+0.3
V
0.4
V
V
15/27