M76DW52003TA Datasheet, PDF (1/27 Pages) STMicroelectronics – 32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory and 4Mbit (256Kb x16) SRAM, Multiple Memory Product

M76DW52003TA
M76DW52003BA
32Mbit (4Mb x8/ 2Mb x16, Dual Bank, Boot Block) Flash Memory
and 4Mbit (256Kb x16) SRAM, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY
■ MULTIPLE MEMORY PRODUCT
– 32 Mbit (4Mb x8 or 2Mb x16), Dual Bank, Boot
Block, Flash Memory
– 4 Mbit (256Kb x 16) SRAM
■ SUPPLY VOLTAGE
– V_CCF = 2.7V to 3.3V
– V_CCS = 2.7V to 3.3V
– V_PPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70, 90ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Top Device Code, M76DW52003TA: 225Eh
– Bottom Device Code, M76DW52003BA:
225Fh
FLASH MEMORY
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
– Double Word/ Quadruple Byte Program
■ MEMORY BLOCKS
– Dual Bank Memory Array: 8Mbit+24Mbit
– Parameter Blocks (Top or Bottom Location)
■ DUAL OPERATIONS
– Read in one bank while Program or Erase in
other
■ ERASE SUSPEND and RESUME MODES
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
■ V_PP/WP PIN for FAST PROGRAM and WRITE
PROTECT
■ TEMPORARY BLOCK UNPROTECTION
MODE
■ COMMON FLASH INTERFACE
– 64 bit Security Code
Figure 1. Package
FBGA
LFBGA73 (ZA)
8 x 11.6 mm
■ EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
SRAM
■ 4 Mbit (256Kb x 16)
■ ACCESS TIME: 70ns
■ LOW V_CCS DATA RETENTION: 1.5V
■ POWER DOWN FEATURES USING TWO
CHIP ENABLE INPUTS
September 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
1/27