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| ST7LITE3XF2 Datasheet, PDF (145/173 Pages) STMicroelectronics – 8-bit MCU with single voltage Flash, data EEPROM, ADC, timers, SPI, LINSCI™ | |||
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ST7LITE3xF2
13.6 MEMORY CHARACTERISTICS
TA = -40°C to 125°C, unless otherwise specified
13.6.1 RAM and Hardware Registers
Symbol
Parameter
VRM
Data retention mode 1)
Conditions
Min
Typ
Max
Unit
HALT mode (or RESET)
1.6
V
13.6.2 FLASH Program Memory
Symbol
Parameter
VDD
tprog
tRET
NRW
Operating voltage for Flash write/erase
Programming time for 1~32 bytes 2)
Programming time for 1.5 kBytes
Data retention 4)
Write erase cycles
IDD
Supply current
Conditions
Min
Refer to operating range
of VDD with TA, section
2.7
13.3.1 on page 133
TA=â40 to +125°C
TA=+25°C
TA=+55°C3)
20
TA=+25°C
10K
Read / Write / Erase
modes
fCPU = 8MHz, VDD = 5.5V
No Read/No Write Mode
Power down mode / HALT
Typ
5
0.24
0
Max Unit
5.5
V
10
ms
0.48
s
years
cycles
2.6 6) mA
100
µA
0.1
µA
13.6.3 EEPROM Data Memory
Symbol
Parameter
Conditions
Min Typ Max Unit
Refer to operating range
VDD Operating voltage for EEPROM write/erase of VDD with TA, section
2.7
13.3.1 on page 133
5.5
V
tprog
tret
NRW
Programming time for 1~32 bytes
Data retention 4)
Write erase cycles
TA=â40 to +125°C
TA=+55°C 3)
TA=+25°C
5
20
300K
10 ms
years
cycles
Notes:
1. Minimum VDD supply voltage without losing data stored in RAM (in HALT mode or under RESET) or in hardware reg-
isters (only in HALT mode). Guaranteed by construction, not tested in production.
2. Up to 32 bytes can be programmed at a time.
3. The data retention time increases when the TA decreases.
4. Data based on reliability test results and monitored in production.
5. Data based on characterization results, not tested in production.
6. Guaranteed by Design. Not tested in production.
145/173
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