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M72DW64000B Datasheet, PDF (13/19 Pages) STMicroelectronics – 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
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M72DW64000B
Table 6. Flash DC Characteristics
Symbol
Parameter
Test Condition
Min
ILI
Input Leakage Current
0V ≤ VIN ≤ VCC
ILO Output Leakage Current
0V ≤ VOUT ≤ VCC
ICC1(2) Supply Current (Read)
EF = VIL, G = VIH,
f = 6MHz
ICC2 Supply Current (Standby)
EF = VCC ±0.2V,
RPF = VCC ±0.2V
ICC3 (1,2)
Supply Current (Program/
Erase)
Program/Erase
Controller active
VPP/WP =
VIL or VIH
VPP/WP = VPP
VIL Input Low Voltage
–0.5
VIH Input High Voltage
0.7VCC
VPP
Voltage for VPP/WP Program
Acceleration
VCC = 3.0V ±10%
11.5
IPP
Current for VPP/WP Program
Acceleration
VCC = 3.0V ±10%
VOL Output Low Voltage
IOL = 1.8mA
VOH Output High Voltage
IOH = –100µA
VCC –0.4
VID Identification Voltage
11.5
VLKO
Program/Erase Lockout Supply
Voltage
1.8
Note: 1. Sampled only, not 100% tested.
2. In Dual operations the Supply Current will be the sum of ICC1(read) and ICC3 (program/erase).
Max
±1
±1
10
100
20
20
0.8
VCC +0.3
12.5
15
0.45
12.5
2.3
Unit
µA
µA
mA
µA
mA
mA
V
V
V
mA
V
V
V
V
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