M72DW64000B Datasheet, PDF (1/19 Pages) STMicroelectronics – 64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and 16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product

M72DW64000B
64Mbit (x8/ x16, Multiple Bank, Boot Block) Flash Memory and
16Mbit Pseudo SRAM, 3V Supply, Multiple Memory Product
PRELIMINARY DATA
FEATURES SUMMARY
■ MULTIPLE MEMORY PRODUCT
– 64Mbit (8M x8 or 4M x16), Multiple Bank, Page,
Boot Block, Flash Memory
– 16Mbit (1M x 16) Pseudo Static RAM
■ SUPPLY VOLTAGE
– V_CCF = V_CCP = 2.7 to 3.3V
– V_PPF = 12V for Fast Program (optional)
■ ACCESS TIME: 70, 90ns
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 0020h
– Device Code: 227Eh + 2202h + 2201h
FLASH MEMORY
■ ASYNCHRONOUS PAGE READ MODE
– Page Width: 4 Words
– Page Access: 25, 30ns
■ PROGRAMMING TIME
– 10µs per Byte/Word typical
– 4 Words/ 8 Bytes at-a-time Program
■ MEMORY BLOCKS
– Quadruple Bank Memory Array:
8Mbits + 24Mbits + 24Mbits + 8Mbits
– Parameter Blocks (at both Top and Bottom)
■ DUAL OPERATIONS
– While Program or Erase in a group of banks
(from 1 to 3), Read in any of the other banks
■ PROGRAM/ERASE SUSPEND and RESUME
MODES
– Read from any Block during Program
Suspend
– Read and Program another Block during
Erase Suspend
■ UNLOCK BYPASS PROGRAM COMMAND
– Faster Production/Batch Programming
Figure 1. Package
FBGA
LFBGA73 (ZA)
8 x 11.6mm
■ V_PP/WP PIN for FAST PROGRAM and WRITE
PROTECT
■ TEMPORARY BLOCK UNPROTECTION
MODE
■ COMMON FLASH INTERFACE
– 64 bit Security Code
■ EXTENDED MEMORY BLOCK
– Extra block used as security block or to store
additional information
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
■ ACCESS TIME: 70ns
■ DEEP POWER DOWN CURRENT: 10µA
■ LOW V_CC DATA RETENTION: 2.3V
■ LOW STANDBY CURRENT: 70µA
October 2003
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
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