M36W0R6040T0 Datasheet, PDF (13/18 Pages) STMicroelectronics – 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package

M36W0R6040T0, M36W0R6040B0
Table 6. Flash Memory DC Characteristics - Currents
Symbol
Parameter
Test Condition
Min
Typ
I_LI Input Leakage Current
0V ≤ V_IN ≤ V_DDQ
I_LO Output Leakage Current
0V ≤ V_OUT ≤ V_DDQ
Supply Current
Asynchronous Read (f=6MHz)
E_F = V_IL, G_F = V_IH
3
4 Word
7
Supply Current
8 Word
10
Synchronous Read (f=54MHz)
16 Word
12
I_DD1
Continuous
13
4 Word
8
Supply Current
8 Word
11
Synchronous Read (f=66MHz)
16 Word
14
Continuous
16
I_DD2 Supply Current (Reset)
RP_F = V_SS ± 0.2V
10
I_DD3 Supply Current (Standby)
E_F = V_DDF ± 0.2V
10
I_DD4 Supply Current (Automatic Standby)
E_F = V_IL, G_F = V_IH
10
V_PPF = V_PPH
8
Supply Current (Program)
I_DD5 ⁽¹⁾
V_PPF = V_DDF
10
V_PPF = V_PPH
8
Supply Current (Erase)
V_PPF = V_DDF
10
I_DD6 ^(1,2)
Supply Current
(Dual Operations)
Program/Erase in one
Bank, Asynchronous
13
Read in another Bank
Program/Erase in one
Bank, Synchronous
23
Read in another Bank
I_DD7(1)
Supply Current Program/ Erase
Suspended (Standby)
E_F = V_DDF ± 0.2V
10
V_PPF = V_PPH
2
V_PPF Supply Current (Program)
I_PP1(1)
V_PPF = V_DDF
0.2
V_PPF = V_PPH
2
V_PPF Supply Current (Erase)
V_PPF = V_DDF
0.2
I_PP2 V_PPF Supply Current (Read)
V_PPF ≤ V_DDF
0.2
I_PP3(1) ^VPPF ^{Supply Current (Standby)}
V_PPF ≤ V_DDF
0.2
Note: 1. Sampled only, not 100% tested.
2. V_DDF Dual Operation current is the sum of read and program or erase currents.
Max
Unit
±1
µA
±1
µA
6
mA
16
mA
18
mA
22
mA
25
mA
17
mA
20
mA
25
mA
30
mA
50
µA
50
µA
50
µA
15
mA
20
mA
15
mA
20
mA
26
mA
45
mA
50
µA
5
mA
5
µA
5
mA
5
µA
5
µA
5
µA
13/18