M36W0R6040T0 Datasheet, PDF (1/18 Pages) STMicroelectronics – 64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package

M36W0R6040T0
M36W0R6040B0
64 Mbit (4Mb x16, Multiple Bank, Burst) Flash Memory
and 16 Mbit (1Mb x16) PSRAM, Multi-Chip Package
FEATURES SUMMARY
■ MULTI-CHIP PACKAGE
– 1 die of 64 Mbit (4Mb x 16) Flash Memory
– 1 die of 16 Mbit (1Mb x 16) Pseudo SRAM
■ SUPPLY VOLTAGE
– V_DDF = V_DDP = V_DDQ = 1.7V to 1.95V
■ LOW POWER CONSUMPTION
■ ELECTRONIC SIGNATURE
– Manufacturer Code: 20h
– Device Code (Top Flash Configuration),
M36W0R6040T0: 8810h
– Device Code (Bottom Flash
Configuration), M36W0R6040B0: 8811h
■ PACKAGES
– Compliant with Lead-Free Soldering
Processes
– Lead-Free Versions
FLASH MEMORY
■ PROGRAMMING TIME
– 8µs by Word typical for Fast Factory
Program
– Double/Quadruple Word Program option
– Enhanced Factory Program options
■ MEMORY BLOCKS
– Multiple Bank Memory Array: 4 Mbit
Banks
– Parameter Blocks (Top location)
■ SYNCHRONOUS / ASYNCHRONOUS READ
– Synchronous Burst Read mode: 66MHz
– Asynchronous/ Synchronous Page Read
mode
– Random Access: 70ns
■ DUAL OPERATIONS
– Program Erase in one Bank while Read in
others
– No delay between Read and Write
operations
Figure 1. Package
FBGA
Stacked TFBGA88 (ZA)
8 x 10mm
■ BLOCK LOCKING
– All blocks locked at Power-up
– Any combination of blocks can be locked
– WP_F for Block Lock-Down
■ SECURITY
– 128-bit user programmable OTP cells
– 64-bit unique device number
■ COMMON FLASH INTERFACE (CFI)
■ 100,000 PROGRAM/ERASE CYCLES per
BLOCK
PSRAM
■ ACCESS TIME: 70ns
■ LOW STANDBY CURRENT: 110µA
■ DEEP POWER DOWN CURRENT: 10µA
December 2004
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