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M36LLR8760T1 Datasheet, PDF (13/19 Pages) STMicroelectronics – 256 + 128 Mbit (Multiple Bank, Multi-Level, Burst) Flash Memory 64 Mbit (Burst) PSRAM, 1.8V Supply, Multi-Chip Package
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M36LLR8760T1, M36LLR8760D1, M36LLR8760M1, M36LLR8760B1
Table 6. Flash 1 DC Characteristics - Currents
Symbol
Parameter
Test Condition
Typ
ILI Input Leakage Current
0V ≤ VIN ≤ VDDQF
ILO Output Leakage Current
0V ≤ VOUT ≤ VDDQF
Supply Current
Asynchronous Read (f=5MHz)
EF1 = VIL, GF1 = VIH
13
IDD1
Supply Current
Synchronous Read (f=54MHz)
4 Word
16
8 Word
18
16 Word
23
Continuous
25
IDD2
Supply Current
(Reset)
RPF = VSS ± 0.2V
50
IDD3 Supply Current (Standby)
EF1 = VDDF1 ± 0.2V
50
IDD4 Supply Current (Automatic Standby)
EF1 = VIL, GF1 = VIH
50
IDD5 (1)
Supply Current (Program)
Supply Current (Erase)
VPPF = VPPH
8
VPPF = VDDF1
10
VPPF = VPPH
8
VPPF = VDDF1
10
IDD6 (1,2)
Supply Current
(Dual Operations)
Program/Erase in one Bank,
Asynchronous Read in another
23
Bank
Program/Erase in one Bank,
Synchronous Read (Continuous
35
f=54MHz) in another Bank
IDD7(1)
Supply Current Program/ Erase
Suspended (Standby)
EF1 = VDDF1 ± 0.2V
50
IPP1(1)
VPPF Supply Current (Program)
VPPF Supply Current (Erase)
VPPF = VPPH
2
VPPF = VDDF1
0.2
VPPF = VPPH
2
VPPF = VDDF1
0.2
IPP2 VPPF Supply Current (Read)
VPPF ≤ VDDF1
0.2
IPP3(1) VPPF Supply Current (Standby)
VPPF ≤ VDDF1
0.2
Note: 1. Sampled only, not 100% tested.
2. VDDF1 Dual Operation current is the sum of read and program or erase currents.
Max
Unit
±1
µA
±1
µA
15
mA
18
mA
20
mA
25
mA
27
mA
110
µA
110
µA
110
µA
20
mA
25
mA
20
mA
25
mA
40
mA
52
mA
110
µA
5
mA
5
µA
5
mA
5
µA
5
µA
5
µA
13/19
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