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| VNLD5160-E Datasheet, PDF (12/20 Pages) STMicroelectronics – OMNIFET III fully protected low-side driver | |||
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Application information
VNLD5160-E
Let:
⢠Ilatchup > 20 mA
⢠VOHµC > 4.5 V
⢠35 Ω ⤠Rprot ⤠100 KΩ
Then, the recommended value is Rprot = 10 KΩ
Figure 6 shows the turn-off current drawn during the demagnetization.
Figure 6. Maximum demagnetization energy (VCC = 13.5 V)
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5HSHWLWLYHSXOVH7MVWDUW Â&
/ P+
91/'[0D[LPXPWXUQRII(QHUJ\YHUVXV7GHPDJ
91/'[6LQJOH3XOVH
5HSHWLWLYHSXOVH7MVWDUW Â&
5HSHWLWLYHSXOVH7MVWDUW Â&
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("1($'5
1. Values are generated with RL = 0Ω.
In case of repetitive pulses, Tjstart (at the beginning of each demagnetization) of every pulse must not
exceed the temperature specified above for curves A and B
12/20
DocID027681 Rev 2
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