VNLD5160-E Datasheet, PDF (1/20 Pages) STMicroelectronics – OMNIFET III fully protected low-side driver

VNLD5160-E
OMNIFET III fully protected low-side driver
Datasheet - production data
SO-8
Features
Type
VNLD5160-E
V_clamp
41 V
R_DS(on)
160 mΩ
I_D
3.5 A
• Automotive qualified
• Drain current: 3.5 A
• ESD protection
• Overvoltage clamp
• Thermal shutdown
• Current and power limitation
• Very low standby current
• Very low electromagnetic susceptibility
• Compliant with European directive 2002/95/EC
• Open drain status output
• Specially intended for R10W or 2xR5W
automotive signal lamps
Description
The VNLD5160-E is a monolithic device made
using STMicroelectronics^® VIPower^® technology,
intended for driving resistive or inductive loads
with one side connected to the battery. Built-in
thermal shutdown protects the chip from
overtemperature and short-circuit. Output current
limitation protects the device in an overload
condition. In case of long duration overload, the
device limits the dissipated power to a safe level
up to thermal shutdown intervention.Thermal
shutdown, with automatic restart, allows the
device to recover normal operation as soon as a
fault condition disappears. Fast demagnetization
of inductive loads is achieved at turn-off.
Package
SO-8
Table 1. Devices summary
Order codes
Tube
VNLD5160-E
Tape and reel
VNLD5160TR-E
September 2015
This is information on a product in full production.
DocID027681 Rev 2
1/20
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