STM32L486XX Datasheet, PDF (119/233 Pages) STMicroelectronics – Batch acquisition mode

Symbol
Parameter
Supply current
I_DD(S₍R₄₎AM2)
to be added in
Standby mode
when SRAM2
is retained
I_DD(wakeup
from
Standby)
Supply current
during wakeup
from Standby
mode
Table 37. Current consumption in Standby mode (continued)
Conditions
TYP
-
V_DD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C
1.8 V 235 641 2293 5192 11213 588
-
2.4 V 237 645 2303 5213 11246 593
3 V 236 647 2306 5221 11333 593
3.6 V 235 646 2308 5200 11327 595
Wakeup clock is
MSI = 4 MHz.
See ⁽⁵⁾.
3 V 1.7
-
-
-
-
55 °C
1603
1613
1618
1620
MAX⁽¹⁾
Unit
85 °C 105 °C 125 °C
5733 12980 28033
5758 13033 28115 _nA
5765 13053 28333
5770 13075 28350
-
mA
1. Guaranteed by characterization results, unless otherwise specified.
2. Guaranteed by test in production.
3. Based on characterization done with a 32.768 kHz crystal (MC306-G-06Q-32.768, manufacturer JFVNY) with two 6.8 pF loading capacitors.
4.
The supply current
I_DD(SRAM2).
in
Standby
with
SRAM2
mode
is:
I_DD(Standby)
+
I_DD(SRAM2).
The
supply
current
in
Standby
with
RTC
with
SRAM2
mode
is:
I_DD(Standby
+
RTC)
+
5. Wakeup with code execution from Flash. Average value given for a typical wakeup time as specified in Table 41: Low-power mode wakeup timings.
Symbol
Parameter
Supply current
in Shutdown
mode
I_DD(Shutdown) (backup
registers
retained) RTC
disabled
Table 38. Current consumption in Shutdown mode
Conditions
TYP
-
V_DD 25 °C 55 °C 85 °C 105 °C 125 °C 25 °C
1.8 V 29.8 194 1110 3250 9093 75
2.4 V 44.3 237 1310 3798 10473 111
-
3 V 64.1 293 1554 4461 12082 160
55 °C
485
593
733
MAX⁽¹⁾
Unit
85 °C 105 °C 125 °C
2775 8125 22733
3275 9495 26183
3885 11153 30205 _nA
3.6 V 112 420 2041 5689 15186 280 1050 5103 14223 37965