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M28256 Datasheet, PDF (11/21 Pages) STMicroelectronics – 256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection
M28256
Table 13. Write Mode AC Characteristics
(TA = 0 to 70°C or –40 to 85°C; VCC = 2.7V to 3.6V)
Symbol
Alt
Parameter
Test Condition
tAVWL
tAS
Address Valid to Write Enable Low
tAVEL
tAS
Address Valid to Chip Enable Low
tELWL
tCES
Chip Enable Low to Write Enable Low
tGHWL
tOES
Output Enable High to Write Enable
Low
tGHEL
tOES
Output Enable High to Chip Enable Low
tWLEL
tWES
Write Enable Low to Chip Enable Low
tWLAX
tAH
Write Enable Low to Address Transition
tELAX
tAH
Chip Enable Low to Address Transition
tWLDV
tDV
Write Enable Low to Input Valid
tELDV
tDV
Chip Enable Low to Input Valid
tELEH
tWP
Chip Enable Low to Chip Enable High
tWHEH
tCEH
Write Enable High to Chip Enable High
tWHGL
tOEH
Write Enable High to Output Enable
Low
tEHGL
tOEH
Chip Enable High to Output Enable Low
tEHWH
tWEH
Chip Enable High to Write Enable High
tWHDX
tDH
Write Enable High to Input Transition
tEHDX
tDH
Chip Enable High to Input Transition
tWHWL
tWPH
Write Enable High to Write Enable Low
tWLWH
tWP
Write Enable Low to Write Enable High
tWHWH
tBLC
Byte Load Repeat Cycle Time
tWHRH
tWC
Write Cycle Time
tEL, tWL
E or W Input Filter Pulse Width
tDVWH
tDS
Data Valid before Write Enable High
tDVEH
tDS
Data Valid before Chip Enable High
Note: 1. Characterized only but not tested in production.
E = VIL, G = VIH
G = VIH, W = VIL
G = VIH
E = VIL
W = VIL
G = VIH
E = VIL, G = VIH
G = VIH, W = VIL
Note 1
M28256-W
Unit
Min Max
0
ns
0
ns
0
ns
0
ns
0
ns
0
ns
70
ns
70
ns
1
µs
1
µs
100
ns
0
ns
0
ns
0
ns
0
ns
0
ns
0
ns
100
ns
100
ns
0.2
150
µs
5
ms
10
ns
50
ns
50
ns
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