M28256 Datasheet, PDF (1/21 Pages) STMicroelectronics – 256 Kbit 32Kb x8 Parallel EEPROM with Software Data Protection

M28256
256 Kbit (32Kb x8) Parallel EEPROM
with Software Data Protection
FAST ACCESS TIME:
– 90ns at 5V
– 120ns at 3V
SINGLE SUPPLY VOLTAGE:
– 5V ± 10% for M28256
– 2.7V to 3.6V for M28256-xxW
LOW POWER CONSUMPTION
FAST WRITE CYCLE:
– 64 Bytes Page Write Operation
– Byte or Page Write Cycle
ENHANCED END of WRITE DETECTION:
– Data Polling
– Toggle Bit
STATUS REGISTER
HIGH RELIABILITY DOUBLE POLYSILICON,
CMOS TECHNOLOGY:
– Endurance >100,000 Erase/Write Cycles
– Data Retention >10 Years
JEDEC APPROVED BYTEWIDE PIN OUT
ADDRESS and DATA LATCHED ON-CHIP
SOFTWARE DATA PROTECTION
PRELIMINARY DATA
28
1
PDIP28 (BS)
PLCC32 (KA)
28
1
SO28 (MS)
300 mils
TSOP28 (NS)
8 x13.4mm
Figure 1. Logic Diagram
DESCRIPTION
The M28256 and M28256-Ware 32K x8 low power
Parallel EEPROM fabricatedwith STMicroelectron-
ics proprietary double polysilicon CMOS technol-
ogy.
Table 1. Signal Names
A0-A14
Address Input
DQ0-DQ7 Data Input / Output
W
Write Enable
E
Chip Enable
G
Output Enable
VCC
Supply Voltage
V_SS
Ground
VCC
15
A0-A14
8
DQ0-DQ7
W
M28256
E
G
VSS
AI01885
January 1999
This is preliminary information on a new product now in developmentor undergoing evaluation . Detail s are subject to change without notice.
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