M29W400BB Datasheet, PDF (10/25 Pages) STMicroelectronics – 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory

M29W400BT, M29W400BB
Erase Suspend Command. The Erase Suspend
Command may be used to temporarily suspend a
Block Erase operation and return the memory to
Read mode. The command requires one Bus
Write operation.
The Program/Erase Controller will suspend within
15µs of the Erase Suspend Command being is-
sued. Once the Program/Erase Controller has
stopped the memory will be set to Read mode and
the Erase will be suspended. If the Erase Suspend
command is issued during the period when the
memory is waiting for an additional block (before
the Program/Erase Controller starts) then the
Erase is suspended immediately and will start im-
mediately when the Erase Resume Command is
issued. It will not be possible to select any further
blocks for erasure after the Erase Resume.
During Erase Suspend it is possible to Read and
Program cells in blocks that are not being erased;
both Read and Program operations behave as
normal on these blocks. Reading from blocks that
are being erased will output the Status Register. It
is also possible to enter the Auto Select mode: the
memory will behave as in the Auto Select mode on
all blocks until a Read/Reset command returns the
memory to Erase Suspend mode.
Erase Resume Command. The Erase Resume
command must be used to restart the Program/
Erase Controller from Erase Suspend. An erase
can be suspended and resumed more than once.
Table 9. Program, Erase Times and Program, Erase Endurance Cycles
(T_A = 0 to 70°C or –40 to 85°C)
Parameter
Min
Typ ⁽¹⁾
Typical after
100k W/E Cycles ⁽¹⁾
Max
Unit
Chip Erase (All bits in the memory set to ‘0’)
2.5
2.5
sec
Chip Erase
6
6
35
sec
Block Erase (64 Kbytes)
0.8
0.8
6
sec
Program (Byte or Word)
10
10
200
µs
Chip Program (Byte by Byte)
5.5
5.5
30
sec
Chip Program (Word by Word)
2.8
2.8
15
sec
Program/Erase Cycles (per Block)
100,000
cycles
Note: 1. T_A = 25°C, V_CC = 3.3V.
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