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M29W400BB Datasheet, PDF (1/25 Pages) STMicroelectronics – 4 Mbit (512Kb x8 or 256Kb x16, Boot Block) Low Voltage Single Supply Flash Memory | |||
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M29W400BT
M29W400BB
4 Mbit (512Kb x8 or 256Kb x16, Boot Block)
Low Voltage Single Supply Flash Memory
s SINGLE 2.7 to 3.6V SUPPLY VOLTAGE for
PROGRAM, ERASE and READ OPERATIONS
s ACCESS TIME: 55ns
s PROGRAMMING TIME
â 10µs per Byte/Word typical
s 11 MEMORY BLOCKS
â 1 Boot Block (Top or Bottom Location)
â 2 Parameter and 8 Main Blocks
s PROGRAM/ERASE CONTROLLER
â Embedded Byte/Word Program algorithm
â Embedded Multi-Block/Chip Erase algorithm
â Status Register Polling and Toggle Bits
â Ready/Busy Output Pin
s ERASE SUSPEND and RESUME MODES
â Read and Program another Block during
Erase Suspend
s UNLOCK BYPASS PROGRAM COMMAND
â Faster Production/Batch Programming
s TEMPORARY BLOCK UNPROTECTION
MODE
s LOW POWER CONSUMPTION
â Standby and Automatic Standby
s 100,000 PROGRAM/ERASE CYCLES per
BLOCK
s 20 YEARS DATA RETENTION
â Defectivity below 1 ppm/year
s ELECTRONIC SIGNATURE
â Manufacturer Code: 0020h
â Top Device Code M29W400BT: 00EEh
â Bottom Device Code M29W400BB: 00EFh
TSOP48 (N)
12 x 20mm
FBGA
TFBGA48 (ZA)
6 x 8 ball array
44
1
SO44 (M)
Figure 1. Logic Diagram
VCC
18
A0-A17
15
DQ0-DQ14
W
DQ15Aâ1
M29W400BT
E
M29W400BB
BYTE
G
RB
RP
VSS
AI02934
June 2001
1/25
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