VNL5030J-E Datasheet, PDF (1/28 Pages) STMicroelectronics – fully protected low-side driver

PowerSSO-12
Features
SO-8
Type
VNL5030J-E
VNL5030S5-E
V_clamp
41 V
R_DS(on)
30 mΩ
I_D
25 A
• Automotive qualified
• Drain current: 25 A
• ESD protection
• Overvoltage clamp
• Thermal shutdown
• Current and power limitation
• Very low standby current
• Very low electromagnetic susceptibility
• Compliant with European directive 2002/95/EC
• Open drain status output
VNL5030J-E
VNL5030S5-E
OMNIFET III
fully protected low-side driver
Datasheet - production data
Description
The VNL5030J-E and VNL5030S5-E are
monolithic devices made using
STMicroelectronics^® VIPower^® technology,
intended for driving resistive or inductive loads
with one side connected to the battery. Built-in
thermal shutdown protects the chip from
overtemperature and short-circuit. Output current
limitation protects the devices in an overload
condition. In case of long duration overload, the
device limits the dissipated power to a safe level
up to thermal shutdown intervention.Thermal
shutdown, with automatic restart, allows the
device to recover normal operation as soon as a
fault condition disappears. Fast demagnetization
of inductive loads is achieved at turn-off.
Package
PowerSSO-12
SO-8
Table 1. Devices summary
Order codes
Tube
VNL5030J-E
VNL5030S5-E
Tape and reel
VNL5030JTR-E
VNL5030S5TR-E
November 2013
This is information on a product in full production.
DocID022767 Rev 6
1/28
www.st.com