VND670SP Datasheet, PDF (1/14 Pages) STMicroelectronics – DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION

®
VND670SP
DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS
GATE DRIVER (BRIDGE CONFIGURATION)
TYPE
VND670SP
R_DS(on)
30 mΩ
I_OUT
15 A
V_DSS
40 V
s OUTPUT CURRENT:15A PER CHANNEL
s 5V LOGIC LEVEL COMPATIBLE INPUTS
s GATE DRIVE FOR TWO EXTERNAL POWER
MOS
s UNDERVOLTAGE AND OVERVOLTAGE
SHUT-DOWN
s OVERVOLTAGE CLAMP
s THERMAL SHUT DOWN
s CROSS-CONDUCTION PROTECTION
s CURRENT LIMITATION
s VERY LOW STAND-BY POWER
CONSUMPTION
s PWM OPERATION UP TO 10 KHz
s PROTECTION AGAINST:
LOSS OF GROUND AND LOSS OF V_CC
s REVERSE BATTERY PROTECTION (*)
DESCRIPTION
The VND670SP is a monolithic device made
using STMicroelectronics VIPower technology
M0-3, intended for driving motors in full bridge
10
1
PowerSO-10™
configuration. The device integrates two 30 mΩ
Power MOSFET in high side configuration, and
provides gate drive for two external Power
MOSFET used as low side switches. IN_A and IN_B
allow to select clockwise or counter clockwise
drive or brake; DIAG_A/EN_A, DIAG_B/EN_B allow to
disable one half bridge and feedback diagnostic.
Built-in thermal shut-down, combined with a
current limiter, protects the chip in
overtemperature and short circuit conditions.
Short to battery protects the external connected
low-side Power MOSFET.
BLOCK DIAGRAM
V_CC
IN_A
IN_B
DIAG_A/EN_A
DIAG_B/EN_B
PWM
(*) See note at page 5
January 2003
Undervolt.
INTERNAL
SUPPLY
LOGIC
Short to battery
Short to battery
Overtemp. Overtemp. Current Current
A
B
Limiter B Limiter A
GND
OUT_A
OUT_B
GATE_A
GATE_B
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