STD90NH02L Datasheet, PDF (1/12 Pages) STMicroelectronics – N-CHANNEL 24V - 0.0052 ohm - 60A DPAK/IPAK STripFET™ III POWER MOSFET

STD90NH02L
N-CHANNEL 24V - 0.0052 Ω - 60A DPAK/IPAK
STripFET™ III POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD90NH02L
24 V < 0.006 Ω 60 A(2)
s TYPICAL R_DS(on) = 0.0052 Ω @ 10 V
s TYPICAL R_DS(on) = 0.007 Ω @ 5 V
s R_DS(ON) * Qg INDUSTRY’s BENCHMARK
s CONDUCTION LOSSES REDUCED
s SWITCHING LOSSES REDUCED
s LOW THRESHOLD DEVICE
s THROUGH-HOLE IPAK (TO-251) POWER
PACKAGE IN TUBE (SUFFIX “-1")
s SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
The STD90NH02L utilizes the latest advanced design
rules of ST’s proprietary STripFET™ technology. This is
suitable fot the most demanding DC-DC converter
application where high efficiency is to be achieved.
APPLICATIONS
s SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY DC/DC CONVERTES
3
2
1
IPAK
TO-251
(Suffix “-1”)
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_spike(1) Drain-source Voltage Rating
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(2)
Drain Current (continuous) at T_C = 25°C
I_D(2)
Drain Current (continuous) at T_C = 100°C
I_DM(3) Drain Current (pulsed)
P_tot
Total Dissipation at T_C = 25°C
Derating Factor
E_AS ⁽⁴⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Max. Operating Junction Temperature
September 2003
Value
30
24
24
± 20
60
60
240
95
0.63
600
-55 to 175
Unit
V
V
V
V
A
A
A
W
W/°C
mJ
°C
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