STD4N80K5 Datasheet, PDF (1/23 Pages) STMicroelectronics – Ultra low gate charge

STD4N80K5, STF4N80K5,
STP4N80K5, STU4N80K5
N-channel 800 V, 2.1 Ω typ., 3 A MDmesh™ K5 Power MOSFETs
in DPAK, TO-220FP, TO-220 and IPAK packages
Datasheet - production data
TAB
3
1
DPAK
TAB
3
2
1
TO-220FP
TAB
3
2
1
TO-220
3
2
1
IPAK
Figure 1. Internal schematic diagram
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Features
Order code V_DS R_DS(on) max. I_D
STD4N80K5
STF4N80K5
800 V
2.5 Ω
3A
STP4N80K5
STU4N80K5
• Industry’s lowest R_DS(on) x area
• Industry’s best figure of merit (FoM)
• Ultra low gate charge
• 100% avalanche tested
• Zener-protected
P_TOT
60 W
20 W
60 W
Applications
• Switching applications
*
6
AM01476v1
Description
These very high voltage N-channel Power
MOSFETs are designed using MDmesh™ K5
technology based on an innovative proprietary
vertical structure. The result is a dramatic
reduction in on-resistance and ultra-low gate
charge for applications requiring superior power
density and high efficiency.
Order code
STD4N80K5
STF4N80K5
STP4N80K5
STU4N80K5
Table 1. Device summary
Marking
Packages
4N80K5
DPAK
TO-220FP
TO-220
IPAK
Packaging
Tape and reel
Tube
February 2015
This is information on a product in full production.
DocID025105 Rev 3
1/23
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