STD45NF75 Datasheet, PDF (1/12 Pages) STMicroelectronics – N-CHANNEL 75V - 0.018 OHM -40A DPAK STripFETTMII POWER MOSFET

STD45NF75
N-CHANNEL 75V - 0.018 Ω -40A DPAK
STripFET™ II POWER MOSFET
TYPE
V_DSS
R_DS(on)
I_D
STD45NF75
75 V
<0.024 Ω
40 A(**)
■ TYPICAL R_DS(on) = 0.018 Ω
■ 100% AVALANCHE TESTED
■ GATE CHARGE MINIMIZED
■ SURFACE-MOUNTING DPAK (TO-252)
POWER PACKAGE IN TAPE & REEL
(SUFFIX “T4")
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size™"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a
remarkable manufacturing reproducibility.
APPLICATIONS
■ HIGH CURRENT, SWITCHING
APPLICATIONS
3
1
DPAK
TO-252
(Suffix “T4”)
INTERNAL SCHEMATIC DIAGRAM
Ordering Information
SALES TYPE
STD45NF75T4
MARKING
D45NF75
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
V_DS
Drain-source Voltage (V_GS = 0)
V_DGR
Drain-gate Voltage (R_GS = 20 kΩ)
V_GS
Gate- source Voltage
I_D(**)
Drain Current (continuous) at T_C = 25°C
I_D
I_DM(•)
P_tot
Drain Current (continuous) at T_C = 100°C
Drain Current (pulsed)
Total Dissipation at T_C = 25°C
Derating Factor
dv/dt ⁽¹⁾ Peak Diode Recovery voltage slope
E_AS ⁽²⁾ Single Pulse Avalanche Energy
T_stg
Storage Temperature
T_j
Operating Junction Temperature
(•) Pulse width limited by safe operating area.
(**) Current Limited by Package
April 2004
PACKAGE
DPAK
PACKAGING
TAPE & REEL
Value
75
75
± 20
40
30
160
100
0.67
20
500
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
(1) I_SD ≤40A, di/dt ≤800A/µs, V_DD ≤ V_(BR)DSS, T_j ≤ T_JMAX
(2) Starting T_j = 25 ^oC, I_D = 20 A, V_DD = 40V
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