STD3NB30 Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 300V - 1.8ohm - 3.2A - DPAK PowerMESH MOSFET

®
STD3NB30
N - CHANNEL 300V - 1.8Ω - 3.2A - DPAK
PowerMESH™ MOSFET
TYPE
V_DSS
R_DS(on)
I_D
ST D3NB30
300 V
< 2Ω
3.2 A
s TYPICAL RDS(on) =1.8 Ω
s EXTREMELY HIGH dv/dt CAPABILITY
s 100% AVALANCHE TESTED
s VERY LOW INTRINSIC CAPACITANCES
s GATE CHARGE MINIMIZED
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL (2500 UNITS)
DESCRIPTION
Using the latest high voltage MESH OVERLAY™
process, STMicroelectronics has designed an
advanced family of power MOSFETs with
outstanding performances. The new patent
pending strip layout coupled with the Company’s
proprietary edge termination structure, gives the
lowest RDS(on) per area, exceptional avalanche
and dv/dt capabilities and unrivalled gate charge
and switching characteristics.
APPLICATIONS
s SWITCH MODE POWER SUPPLIES (SMPS)
s DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Sy mb o l
P a ramet er
V _DS
V _DGR
V_GS
I_D
I_D
I_DM (•)
P_tot
Drain-source Voltage (V_GS = 0)
Drain- gate Voltage (R_GS = 20 kΩ)
G ate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipat ion at T_c = 25 ^oC
Derating Factor
dv/dt(1) Peak Diode Recovery voltage slope
T_stg Storage Temperature
T_j
Max. Operating Junction Temperature
(•) Pulse width limited by safe operating area
January 1999
Va l u e
Un it
300
V
300
V
± 30
V
3.2
A
2
A
12.8
A
40
0.32
W
W /^o C
5.5
-65 to 150
150
( 1) ISD ≤3.2A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX
V/ns
o_C
o_C
1/8