STD30NF03L Datasheet, PDF (1/8 Pages) STMicroelectronics – N - CHANNEL 30V - 0.020 ohm - 30A DPAK STripFET POWER MOSFET

®
STD30NF03L
N - CHANNEL 30V - 0.020 Ω - 30A DPAK
STripFET™ POWER MOSFET
TYPE
V_DSS
R_{DS(o n)}
I_D
STD30NF03L 30 V
< 0.025 Ω
30 A
s TYPICAL RDS(on) = 0.020 Ω
s LOW THRESHOLD DRIVE
s ADD SUFFIX ”T4” FOR ORDERING IN TAPE
& REEL
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronics unique ”Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
APPLICATIONS
s HIGH CURRENT, HIGH SPEED SWITCHING
s SOLENOID AND RELAY DRIVERS
s MOTOR CONTROL, AUDIO AMPLIFIERS
s DC-DC & DC-AC CONVERTERS
3
1
DPAK
TO-252
(Suffix ”T4”)
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
S ymb ol
Parameter
Va l u e
V_DS Drain-source Voltage (V_GS = 0)
30
V_DGR Drain- gate Voltage (R_GS = 20 kΩ)
30
VG S
I_D(•)
I_D
I_DM(••)
P_tot
Gate-source Voltage
Drain Current (continuous) at T_c = 25 ^oC
Drain Current (continuous) at T_c = 100 ^oC
Drain Current (pulsed)
T otal Dissipation at T_c = 25 ^oC
± 20
30
19
120
40
Derating Factor
0.27
EAS (1) Single Pulse Avalanche Energy
100
T_stg Storage Temperature
-65 to 175
T_j Max. Operating Junction Temperature
(••) Pulse width limited by safe operating area
(•)Current limited by the package
175
( 1) starting Tj = 25 ^oC, ID = 15A , VDD = 15V
October 1999
Unit
V
V
V
A
A
A
W
W /^o C
m/J
o_C
o_C
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